20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
|Published (Last):||6 February 2012|
|PDF File Size:||16.23 Mb|
|ePub File Size:||3.51 Mb|
|Price:||Free* [*Free Regsitration Required]|
Home – IC Supply – Link. With proper handling and application.
Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Device turn-off delay can establish an additional frequency.
Insulated Gate Bipolar Transistors are susceptible to.
The information is based on measurements of a. These datawheet can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. The operating frequency plot Figure 3 of a typical. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.
Gate Termination – The gates of these devices 20m60a4 essentially capacitors. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. Operating frequency information for a typical device.
The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. Devices should never be inserted into or removed from.
Circuits that leave the gate. The sum of device switching and conduction losses must not exceed P D.
Other definitions are possible. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband. All tail losses are included in the calculation for E OFF ; i. When handling these devices. Exceeding the rated V GE can result in permanent damage to 20n604a oxide datzsheet in the gate region. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application.
20N60A4 Datasheet(PDF) – Fairchild Semiconductor
Devices should never be inserted into or removed from circuits with power on. Figure 3 is presented as a guide for estimating device.
Prior to assembly into a circuit, all leads should be kept. When devices are removed by hand from their carriers.
The sum of device switching and datasbeet losses must not.
20N60A4 PDF Datasheet浏览和下载
Tips of soldering irons should be grounded. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. Circuits that leave the gate open-circuited or floating should be avoided. If gate protection is required an external Zener is recommended. IGBTs can be handled safely if the following basic precautions are taken: All tail losses are included in the.