2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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datashet Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. Data are collected from each run and stored. Note – final choice is usually determined from characterisation tests and burn-in.

Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.

Note daatasheet I have not bought from this source.

2N3020 Datasheet PDF

All papers referencing this transistor typically originated from his research. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. However transistors were avalanched long before this, as earlier papers below reveal.

High current handling 5.


Stability on all types has been improved by power burn-in. Selection datashwet avalanche transistors for the LHC Project. Vcbo being close to Vceo’ http: Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.


I intend to run more tests and measurements based on this paper.

Williams, 9 October As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. TO is aka SOT54; manufacturer known only where stated abbreviations: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Datsheet source of low cost ZTX avalanche transistors: Data runs were typically 3 to 4 months long, with readings taken weekly.

A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial dattasheet.

2N datasheet, Pinout ,application circuits NPN SILICON PLANAR TRANSISTOR

A Documentary History of Fairchild Semiconductor. For a pockels driver requiring something in the order of a 3. Fast and RF transistors tend to work as well. Asian sources of cheap Zetex avalanche transistors pedigree unknown.

Kuthi, USA Sept I determined the breakdown voltage with the aid of a Tektronix curve datsheet, see bottom of this page for further details. An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.


Makers of the Microchip: Transistor selection – best transistor types for avalanche. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Vcbo as high as possible fewer devices: Woolston This datasheey paper explores multiple Q-switch design topologies.

motorola 2N datasheet & applicatoin notes – Datasheet Archive

Of the three transistors selected in paper A7, only the 2N is readily available in The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.

The Zetexes are made in Russia, presumably on an old fab line. Frequency at least MHz 7. I found paper [A22] only after writing all of this up. Larkin, Highland Technology Inc. Also contains many other topics of interest http: Older diffused-junction types daatasheet do. Appendix B – Subnanosecond rise time pulse generators for the rich and poor.

I assume the reason for suggesting older devices are better, into which I read: Satasheet best suited for low C, L Vcbo close to Vceo R – T R ansistor selection criteria for avalanche.